TeraGaN

Details

Project of the Foundation for Polish Science IRA CENTERA

 

 

Project:

CENTERA – Center for Terahertz Technology Research and Applications

Financing overview:

CENTERA is a new Centre of Excellence financed by the Foundation for Polish Science (project MAB/2017/8) as part of the activity 4.3 "International Research Agendas“, Smart Growth Operational Programme 2014-2020.

Authors:

Professor Wojciech Knap and Professor Thomas Skotnicki

Financial support:

34 434 920 PLN

Field of research:

Physics, Engineering

Project aims:

Study of basic and applied properties of terahertz radiation. Developing innovative instruments and technologies taking advantage of terahertz frequencies.

Strategic foreign partner:

Goethe University Frankfurt (GUF, Germany),

Institute of Electronics, Microelectronics and Nanotechnology (IEMN, France),

Pisa University and Istituto Nanoscienze in Pisa (Italy),

Laboratoire Charles Coulomb and the University of Montpellier (France),

RIKEN THz Center (Japan),

Tohoku University in Sendai (Japan),

Osaka University (Japan)

About project:

Center for Terahertz Research and Applications (CENTERA) is an independent research unit of the Institute of High Pressure Physics, Polish Academy of Sciences, crafted to become a specialized, world-class, interdisciplinary research unit offering an original inter-disciplinary approach to implement Terahertz science and technology to the benefit of the society. It is directed by Prof. Wojciech Knap and Prof. Thomas Skotnicki and funded within the International Research Agendas Programme of the Foundation for Polish Science, carried out from the funds of the European Regional Development Fund under the Smart Growth Operational Programme (SG OP), Priority Axis 4: Increasing the research potential (https://www.fnp.org.pl/en/centera-the-centre-for-terahertz-technology-research-and-applications/).

The activity of CENTERA will be carried out by 5 interacting groups working in the following domains:

  • Solid State Physics - mainly THz plasma instabilities in semiconductor-based low dimensional systems and topological insulators (WG1);
  • Biology and Medicine - paving the way to applications, such as Terahertz signatures of the proteins binding heavy metals in plants and food and THz spectroscopy for diagnosis of cancerous and burned tissue (WG2);
  • Electronics - exploration of high-frequency limits of Field Effect Transistors (FETs) and Heterojunction Bipolar Transistors (HBTs) (WG3);
  • Innovative optics and antennas towards THz-Integrated-Circuit Electronics (WG4);
  • THz applications - demonstrators, and technology transfer (WG5).

Founders of the CENTERA Centre for Terahertz Technology Research and Applications:

Professor Wojciech Knap –graduated from the Faculty of Physics of the University of Warsaw. For many years he has been associated with the University of Montpellier and the National Centre for Scientific Research (CNRS) in France. As part of the LIA-TERAMIR international lab he has coordinated the activities of Terahertz Radiation Lab (TeraGaN) at the Institute of High Pressure Physics, the Polish Academy of Sciences in Warsaw. He is the author and co-author of more than 100 articles in international specialist scientific journals, and author of several patents. Prof. Knap’s scientific pursuits cover numerous fields, including the absorption and emission of terahertz light by free and trapped carriers in shallow dopant states, heterostructures involving GaN/AlGaN nitrides, plasma excitation in nanotransistors, and terahertz radiation of plasmonic structures.

Professor Thomas Skotnicki –graduated from the Faculty of Electronics of the Warsaw University of Technology, where he currently lectures. He obtained his PhD degree at the Institute of Electron Technology in Warsaw and postdoctoral degree at INPG (Grenoble). He is a world-class specialist in semiconductor devices and advanced microelectronic technologies. He has long-standing experience both as a scientist and as an entrepreneur. He has worked in the famous CNET research labs in France, and was a lecturer at the Ecole Polytechnique Federale in Lausanne (Switzerland), Institut Polytechnique de Grenoble (France), and SUPELEC in Rennes (France). He spent 19 years at Europe’s largest electronics manufacturing company, STMicroelectronics, where he was Technical Vice-President and Director, Devices R&D. He is the Vice-Director for Operations and Programme and Consortium Director at CEZAMAT (the Centre for Advanced Materials and Technologies) in Warsaw. In 2001-2007 he worked as editor in the American journal IEEE Transactions on Electron Devices. Author and co-author of more than 350 scientific articles, holder of over 85 patents. He is an IEEE Fellow and an STMicroelectronics Company Fellow.

Group of  CENTERA:

From left:

Dr. Jacek Przybytek

Dr. Dmytro But

Dr Lech Trzeciak

Prof. Wojciech Knap (Founder of the CENTERA)

M. Sc. Ivan Yahniuk

Prof. Thomas Skotnicki (Founder of the CENTERA)

M. Sc. Bartłomiej Grzywacz

M. Sc. Katarzyna Kołys

M. Sc. Pavlo Sai

Dr. Grzegorz Cywiński


Contact:

CENTERA office:

Tel: +48 22 888 00 28

Email:

This email address is being protected from spambots. You need JavaScript enabled to view it.

lech.trzeciak [at] mail.unipress.waw.pl

 

enter for Terahertz Research and Applications (CENTERA) is an independent research unit of the Institute of High Pressure Physics,

Polish Academy of Sciences, crafted to become a specialized, world-class, interdisciplinary research unit offering an original inter-disciplinary approach to implement Terahertz science and technology to the benefit of the society. It is directed by Prof. Wojciech Knap and Prof. Thomas Skotnicki and funded within the International Research Agendas Programme of the Foundation for Polish Science, carried out from the funds of the European Regional Development Fund under the Smart Growth Operational Programme (SG OP), Priority Axis 4: Increasing the research potential (http://www.fnp.org.pl/en/oferta/international- research-agendas-ira/). CENTERA will be supported by two main strategic foreign partners, Goethe University Frankfurt, Germany (GUF), which runs the Goethe-Leibniz Terahertz Center, a joint research facility with the Ferdinand-Braun Institute (Leibniz-Institut für Höchstfrequenztechnik), Berlin, and the Institute for Electronics, Microelectronics and Nanotechnology, Lille, France (IEMN).

The activity of CENTERA will be carried out by 5 interacting groups working in the following domains:

· Solid State Physics - mainly THz plasma instabilities in semiconductor-based low dimensional systems and topological insulators (WG1);

· Biology and Medicine - paving the way to applications, such as Terahertz signatures of the proteins binding heavy metals in plants and food and THz spectroscopy for diagnosis of cancerous and burned tissue (WG2);

· Electronics - exploration of high-frequency limits of Field Effect Transistors (FETs), Heterojunction Bipolar Transistors (HBTs) (WG3) and innovative optics and antennas towards THz-Integrated-Circuit Electronics (WG4)

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Details

The research project Terahertz Sensor Based on Topological Materials in TEAM programme of the Foundation for Polish Science.

Research Team:


Prof. Wojciech Knap
(Principal Investigator)

Dr. Grzegorz Cywiński
(Co-Principal Investigator)



Dr. Jacek Przybytek

Dr. Dmytro B. But

M.Sc. Ivan Yahniuk

 

 

M. Sc. Dmitriy Yavorskiy

Konrad Puźniak

 

 

Former TEAM member staff

 

 

 

M. Sc. Małgorzata M. Bąk

(thesis defense date18.09.2018)

 

 

 

Amount awarded TEAM/2016-3/25: 3 498 988 PLN

  • Project goal

The main objective of the project is creation in Poland at Institute of High Pressure Physics PAS (IHPP PAS) a TEAM of scientists that will explore high frequency (Terahertz) properties/physics and applications of topological insulators for terahertz sensors.

  • Innovation of the project

To reach such devices the project propose the research on innovative HgCdTe and GaSb/InAs structures overcoming existing up today problems: i) having TI states preserved up to elevated temperatures (up to 300 K) ii) allowing fast electrical switching (on/off) of TI states iii) explore GaSb/InAs quantum TI structures that can be fabricated using a standard semiconductor processing.

  • What is within it to be achieved / created - what applications can have the results of the project and in what areas of our daily lives these results may find use
    (eg research will help to generate new medicines, streamline industrial processes, etc.)

Despite the long time from its discovery, there exists still many important problems hindering real world applications of topological isolators. The main problems are: i) TI states are preserved only at cryogenic temperatures (below 10 K); ii) there are no structures/mechanisms allowing fast electrical switching (on/off) of TI states iii) until now most of the discoveries are made using HgTe/CdTe semiconductor materials that do not allow standard high temperature device processing. The general scientific objective of this project is to research on novel two-dimensional structures possessing topological insulator phase that overcomes these existing problems. These novel topological insulators will be obtained special arrangements of III-V or II-VI semiconductor quantum wells. We will search for the best TI semiconductor structures by growing different structures and by tuning the energy band structure with hydrostatic pressure. We will particularly focus on the investigation of hydrostatic pressure driven evolution of basic properties because it allows accelerate research on finding the best parameters (energy band structure, energy and momentum relaxation times, and photon absorption and emission coefficients) in different topological phases without use of very time and budget consuming repetitive growth of the multiple structures. We will use “optical” excitations in Terahertz frequencies range as the main experimental tool. The measurements of inter- and intra-Landau level transitions, lying in THz range, as well as THz photoconductivity will be used to probe the band structure evolution. Independently, research on new THz plasma oscillation/instabilities in different topological insulators phases will be explored as an independent important scientific objective of the project. Thanks to these research we want to answer the basic science questions about the universality of the physical model of 2D TI and about mechanisms of breaking of the topological protection. We want also to answer the question how specific TI states and Dirac fermions (linear dispersion) in TI may modify/influence the THz plasma wave oscillations and instabilities discovered recently in nanometer size 2D structures. Acquired answers for questions mentioned above will provide basis for realizing new high frequency devices based on topological materials. To reach such devices the project propose the research on innovative HgCdTe and GaSb/InAs structures overcoming existing up today problems: i) having TI states preserved up to elevated temperatures (up to 300 K) ii) allowing fast electrical switching (on/off) of TI states iii) explore GaSb/InAs quantum TI structures that can be fabricated using a standard semiconductor processing. Preliminary research that show importance, feasibility and methodology has already started in the frame of international French/Polish/Russian “LIA-TERAMIR” [47]. Feasibility of main project objectives is already documented by multiple high impact international journals publications of the project author [A1, A24]. LIA-TERAMIR will also serve for the present project as the main frame of international collaboration providing, via partners from France and Russia, a privileged access to unique material/samples technology and equipment. At the same time the project will allow to increase the research potential in Poland, at IHPP PAS, by building by world-class leaders, the TEAM having strong international collaborations and performing basic/applied physics research on TI structures (TERA-TEAM) in view of demonstration of innovative TI based high frequency devices as well as terahertz radiation sensors.

Below you can find an example of theoretical modelling of HgTe/CdHgTe quantum wells and pressure phase diagram for such structures.

 

Figure 1. Typical band structure of (001)-oriented HgTe QWs at zero temperature and different QW width: (a) BI phase, d< dc, (b) Dirac cone, d = dc, (c) TI phase d >dc, (d) SM phase, d > dSM. Electron-like E1 subband is shown in blue, while red curves correspond to the heavy-hole subbands. Last panel (e) on the right side shows the pressure phase diagram for single HgTe QWs. The shaded region corresponds to the semimetal phase SM. Open grey region conforms to the TI states. Results for two temperatures 0K and 100K are presented.

Details

http://ncn.gov.pl/sites/all/themes/ncn-nowa/img/logo-en.png

 

Based on the decision of the Director of National Science Centre (Poland) DEC-2016/22/E/ST7/00526 the Sonata BIS project "Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structures" has been granted.

Principal Investigator Dr. Grzegorz Cywiński

Realization period 2017-04-04 do 2021-04-03 (48 months)

Reg. No. 2016/22/E/ST7/00526

Publications

2019

  • AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
    P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
    Semiconductor Science and Technology 34 (2019) 024002
    IF 2.28

2018

  • Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
    G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev
    Appl. Phys. Lett. 112, 133502 (2018)
    IF 3.411
  • An effective method for antenna design in field effect transistor terahertz detectors
    Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czesław, Przybytek Jacek, But Dmytro B., Coquillat Dominnique, Knap Wojciech, Yang Fu-Hua
    The Journal of Infrared and Millimeter Waves (JIRMW) 37, 398-392, (2018)
    IF 0.387

Conferences (2018)

Oral presentations

Posters (2018)

 

2017

Conferences (2017)

 

Details

Our links:

Details

“Laboratory of Terahertz and Mid-Infrared  Collective Phenomena in Semiconductor Nanostructures”

(TERAMIR)

TeraMIR News

 

7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems
of Terahertz Devices & Technologies (RJUSE TeraTech-2018)

Sep. 17 – Sep. 21, 2018, Hall A & Foyer, CBF Nowy Świat, Warsaw, Poland

 

Historical events

  1. LIA TeraMIR meeting (Warsaw, Poland, June 1st –June 2nd, 2017)
  2. MIKON THz Session May 11 & LIA Meeting May 12/13 2016
    (Kraków, Poland,  2016)
  3. The FIRST LIA TeraMIR meeting
    (Warsaw, Poland, 2015)

 

Links

THz Agreement (pdf)

LIA at Laboratoire Charles Coulomb (L2C), CNRS,  Montpellier (France)

  1. Our location (maps)
  2. Publications
  3. Terahertz Laboratory (TeraGaN) NL-11
  4. Project NCN Harmonia