Based on the decision of the Director of National Science Centre (Poland) DEC-2016/22/E/ST7/00526 the Sonata BIS project "Lateral Schottky barrier diodes as innovative tools for investigations of high frequency parameters of nitride structures" has been granted.
Principal Investigator Dr. Grzegorz Cywiński
Realization period 2017-04-04 do 2021-04-03 (48 months)
Reg. No. 2016/22/E/ST7/00526
Publications
2019
- AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range
P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap and G. Cywiński
Semiconductor Science and Technology 34 (2019) 024002
IF 2.28
2018
- Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev
Appl. Phys. Lett. 112, 133502 (2018)
IF 3.411 - An effective method for antenna design in field effect transistor terahertz detectors
Zhang Bo-Wen, Yan Wei, Li Zhao-Feng, Bai Long, Cywinski Grzegorz, Yahniuk Ivan, Szkudlarek Krzesimir, Skierbiszewski Czesław, Przybytek Jacek, But Dmytro B., Coquillat Dominnique, Knap Wojciech, Yang Fu-Hua
The Journal of Infrared and Millimeter Waves (JIRMW) 37, 398-392, (2018)
IF 0.387
Conferences (2018)
- Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN
G. Cywinski ; P. Sai ; I. Yahniuk ; P. Kruszewski ; B. Grzywacz ; J. Przybytek ; P. Prystawko ; A. Khachapuridze; K. Nowakowski-Szkudlarek ; W. Knap ; P. Wisniewski ; B. Stonio ; G. S. Simin ; S. L. Rumyantsev
2018 22nd International Microwave and Radar Conference (MIKON), Pages: 715 - 718
IEEE Conferences (2018) - Millimetre Band Detectors Based on GaN/AlGaN HEMT
D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology)
Oral presentations
- GaN-based transistors for THz radiation detection
G. Cywiński P. Sai, D. B. But, I. Yahniuk, M. Grabowski, M. Sakowicz, P. Kruszewski, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, J. Przybytek, P. Wiśniewski, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap Invited talk
March, 12-15, 2018, Nizhny Novgorod, Russia, XXII Symposium “Nanophysics and Nanoelectronics” - EdgeFET Devices Fabricated on 2DEG GaN/AlGaN Heterostructures for Basic and Applied Sciences
G. Cywiński, P. Sai, D.B. But, P. Prystawko, M. Grabowski, P. Kruszewski, I. Yahniuk, P. Wiśniewski, B. Stonio, M. Słowikowski, B. Grzywacz, G. S. Simin, A. Khachapuridze, C. Skierbiszewski, K. Nowakowski-Szkudlarek, G. Muzioł, J. Przybytek, S.L. Rumyantsev, W. Knap Invited talk
International Symposium on Growth of III-Nitrides ISGN-7 held in Warsaw, Poland, August 5-10, 2018 - Innovative Lateral Schottky Barrier Diodes Based on GaN/AlGaN 2DEG as Building Blocks for New High Frequency Nitride Based Devices
G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski, P. Prystawko, M. Grabowski, K. Nowakowski-Szkudlarek, C. Skierbiszewski, G. Muzioł, D. But, A. Khachapuridze, G. S. Simin, S. L. Rumyantsev, W. Knap; Oral presentation
WS-06 Terahertz Technologies from Fundamentals to Implementations: A Device and Application Prospective. European Microwave Week 2018, Madrid Spain. - Towards Resonant THz Detector Devices Based on Schottky Diodes to 2DEG GaN/AlGaN
G. Cywiński, P. Sai, I. Yahniuk, P. Kruszewski, B. Grzywacz, J. Przybytek, P. Prystawko, A. Khachapuridze, K. Nowakowski-Szkudlarek, W. Knap, P. Wiśniewski, B. Stonio, G. Simin, S. Rumyantsev; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M34: Terahertz technology) - Millimetre Band Detectors Based on GaN/AlGaN HEMT
D. B. But, P. Sai, I. Yahniuk, G. Cywiński, N. Dyakonova, W. Knap, Z. Bo-Wen, Y. Wei, L. Zhao Feng, Y. Fu-Hua; Oral presentation
May 14-17, 2018, Poznań, Poland, MIKON 2018, (M30: Milimeter-wave and sub-THz technology) - Low frequency noise in wire-channel GaN/AlGaN transistors
G. Cywiński, I. Yahniuk, P. Kruszewski, M. Grabowski, K. Nowakowski-Szkudlarek, P. Prystawko, P. Sai, W. Knap, G. S. Simin, and S. L. Rumyantsev Oral presentation
8th International Conference on Unsolved Problems on Noise-Gdańsk University of Technology, Gdańsk, 9-13 July 2018 (Oral) - EdgeFET Based on AlGaN/GaN with Two Lateral Schottky Barrier Gates Towards Resonant Terahertz Detection
P. Sai, D. B. But, K. Nowakowski-Szkudlarek, J. Przybytek, P. Prystawko, I. Yahniuk, B. Stonio, M. Słowikowski, S. L. Rumyantsev, W. Knap, G. Cywiński Contributed talk
RJUSE 2018 7th Russia-Japan-USA-Europe Symposium on Fundamental & Applied Problems of Terahertz Devices & Technologies & 4th TERAMIR International Laboratory Workshop, September 17-21, 2018, Warsaw - · AlGaN/GaN field effect transistor with lateral Schottky barrier gate as sub-millimeter detector
Pavlo Sai, D.B. But, P. Prystawko, I. Yahniuk, K. Nowakowski-Szkudlarek, J. Przybytek, S.L. Rumyantsev, W. Knap, G. Cywiński
Oral presentation
47th International School & Conference on the Physics of Semiconductors
"Jaszowiec 2018" Szczyrk, Poland, June 16th - 22nd, 2018
Posters (2018)
- Towards electrically driven sub-THz GaN/AlGaN based detector
P. Sai et al. Poster presentation
6th EOS Topical Meeting on Terahertz Science & Technology (TST 2018), Berlin, Germany
2017
Conferences (2017)
- Noise Limitations of GaN Lateral Schottky Diodes for THz Applications
G. Cywiński, I. Yahniuk, K. Szkudlarek, P. Kruszewski, G. Muzioł, C. Skierbiszewski, A. Khachapuridze, W. Knap, D. But, and S. L. Rumyantsev
Published in: Noise and Fluctuations (ICNF), 2017 International Conference on
Conference Location: Vilnius, Lithuania - THz Imaging and Wireless Communication Using Nanotransistor Based Detectors: From Basic Physics to First Real World Applications
W. Knap, G. Cywinski, M. Sypek, N. Dyakonova, D. Coquillat, K. Szkudlarek, I. Yahniuk, C. Archier, B. Moulin, M. Triki, M. M. Hella, V. Nodjiadjim, M. Riet, and A. Konczykowska
Published in: Transparent Optical Networks (ICTON), 2017 19th International Conference on, IEEE ICTON 2017